部分代表性论文
1、Lin M, Luo W, Li L, Han Q, Lyu W. Design of the Threshold-Controllable Memristor Emulator Based on NDR Characteristics. Micromachines. 2022; 13(6):829.
2、Lin, M, Han, Q, Luo, W, Wang, X, Chen, J, Lyu, W. A ternary memristor full adder based on literal operation and module operation. International Journal of Circuit Theory and Applications, 2022; 50 (8) , pp.2932-2940. doi:10.1002/cta.3287.
3、Mi Lin, Wei-feng Lyu, Hai-peng Zhang. Novel tri-valued T flip-flop based on the NDR characteristic. Electronics world, 2019,125(1994):18-21.
4、Mi LIN, Qiao WU, Wei-Feng LYU, et al Design of Multiple-valued Logic Unit by Using R-HBT-NDR-Based Memristor. The 9th International Conference on Electronics, Communications and Networks (CECNet2019). 2019: 945-950.
5、Mi Lin, Hai-peng Zhang, Wei-feng Lv. An improved ternary three-rail JK flip-flop design, Proceedings of 2016 IEEE International Conference on Integrated Circuits and Microsystems, 2016: 91-94.
6、Lin Mi, Sun Ling-ling. A novel ternary JK flip-flop using the resonant tunneling diode literal circuit , Journal of Zhejiang University: Science C,2012, 13(12):944-950.
7、Mi Lin,Zhang Hai-Peng,Lu Wei-Feng,Sun Ling-Ling. Establishment of switch-transmission algebra system for resonant tunneling circuits,Electronics World,2011,117(1906):28-32.
8、Lin Mi, Zhang Haipeng, Sun Lingling. Testability Design of Multi-valued RTD circuits, International Conference on Electronics, Communications and Control , 2011:510-513.
9、Mi LIN, Wei-feng LÜ, Ling-ling SUN. Design of ternary D flip-flop with pre-set and pre-reset functions based on resonant tunneling diode literal circuit, Journal of Zhejiang University: Science C,2011, 12(6):507-514.